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Frank C. De Lucia

Frank C. De Lucia

Verified

Ohio State University · Physics

Active 1967–2023

h-index56
Citations11.0k
Papers5788 last 5y
Funding$1.4M
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About

Frank C. De Lucia is an Emeritus Professor and Distinguished University Professor in the Department of Physics at The Ohio State University. His contact information includes an email address (delucia.2@osu.edu), phone number (614-688-4774), and office location in the Physics Research Building, 4146. His professional website and brief CV are also provided by the department. The page indicates his long-standing affiliation with Ohio State University and his role within the Department of Physics, but does not specify his research focus, background, or key contributions.

Research topics

  • Physics
  • Atomic physics
  • Materials science
  • Chemistry
  • Optics

Selected publications

  • Quantum monodromy in NCNCS – direct experimental confirmation

    Physical Chemistry Chemical Physics · 2023-01-01 · 1 citations

    article

    bending mode of NCNCS. As a side benefit we also confirm the power of the GSRB model to extract the required information from the previously available data. The predictions previously provided by the GSRB were surprisingly accurate. Only a slight augmentation of the model was required to allow us to refit it including the new data, while maintaining the quality of the fitting for that data previously available. We also present a very basic introduction to the idea of monodromy and to how the GSRB was used.

  • Contributors

    Elsevier eBooks · 2022-01-01

    book-chapter
  • Quantitative analysis of composition and temperature of semiconductor processing plasmas via terahertz spectroscopy

    Journal of Vacuum Science & Technology A Vacuum Surfaces and Films · 2022-06-10

    article

    The application of terahertz (THz) absorption spectroscopy was developed for chemical characterization in inductively coupled plasmas. Plasma processing is a complex and important tool of the semiconductor manufacturing industry, which makes use of several diagnostic methods for precise process control. Electronically based THz spectroscopy is a technique with favorable attributes for the characterization of plasmas and process control in semiconductor reactors. These attributes include (1) plasmas are transparent and noise-free for THz transmission/detection, (2) concentration and temperatures of molecules can be calculated from first principles without adjustable variables, and (3) the technique has very high resolution and has absolute specificity. However, rotational spectroscopy requires that the molecule have a permanent dipole moment, precluding direct observation of atomic and symmetric species such as fluorine or CF4. In this work, an electronically based 500–750 GHz absorption spectrometer and a method to accurately and simultaneously determine number densities and temperatures were developed. Density and temperature measurements of molecular species in Ar/CF4/CHF3 and N2/CF4/CHF3 plasmas as a function of flow ratio, power, and pressure will be discussed. In addition, a quantitative survey of spectroscopically measurable molecules and radicals was conducted for plasma mixtures using varying quantities of CF4, CHF3, N2, and O2 feedstock gases.

  • Laser-induced breakdown spectroscopy for the detection and characterization of explosives

    Elsevier eBooks · 2022-01-01 · 6 citations

    book-chapter1st authorCorresponding
  • Commercial aluminum powders, Part I: Particle size characterization and slow heating rate thermal analysis

    Powder Technology · 2022-02-01 · 22 citations

    articleOpen access1st authorCorresponding
  • Commercial aluminum powders, part II: Energy release rates induced by rapid heating via pulsed laser excitation

    Powder Technology · 2022-02-01 · 3 citations

    article1st authorCorresponding
  • Effect of sample morphology on the spectral and spatiotemporal characteristics of laser-induced plasmas from aluminum

    Applied Physics A · 2020-01-07 · 30 citations

    article
  • Measuring fast and slow energy release from aluminum powders

    AIP conference proceedings · 2020-01-01 · 10 citations

    articleOpen accessSenior author

    Micron-sized aluminum (Al) powders are currently used in energetics applications, primarily for blast enhancement on extended timescales. A key goal in energetic materials research is to accelerate the reaction of metals during an explosion so that the detonation performance of the explosive is enhanced. Nano-sized Al particles have the potential to react faster than micron-sized Al, but suffer from issues such as the formation of a native oxide layer which delays reaction and strong agglomeration of the particles resulting in incomplete combustion. The mechanisms and timescale of energy release from Al at very high heating rates (1013 K/s) comparable to those behind a detonation front are of significant interest for energetic applications. For the first time, we have systematically investigated the fast (microsecond-timescale) energy release of Al following laser-induced breakdown ignition. A ns-pulsed laser was used to ignite 9 different Al powders ranging in size from 18 nm to <75 µm. A wide variety of diagnostics including the detection of time-resolved AlO emission and infrared combustion emission, high-resolution spectroscopy of the laser-induced plasma and subsequent combustion events, and high-speed imaging to measure the laser-induced shock velocities with improved time resolution were employed to understand the effect of particle size/shape, impurities, and active Al content on the rate of energy release.

  • Optimizing the Performance of Aluminized Explosives: Laser-Based Measurements of Energy Release and Spectroscopic Diagnostics

    2019 IEEE Research and Applications of Photonics in Defense Conference (RAPID) · 2019-08-01 · 6 citations

    articleSenior author

    Methods for facilitating the fast energy release of aluminum to enhance detonation performance will be discussed. The energy release rates of milligram-quantity samples have been compared by measuring the laser-induced shock wave velocities and tracking the formation of AlO on both the microsecond- and millisecond-timescales.

  • CMOS terahertz receivers

    2018-04-01 · 20 citations

    article

    Recent advances of devices and circuits have made CMOS (Complementary Metal Oxide Semiconductor) integrated circuits technology an alternative for realizing capable and affordable THz systems. Coherent detection up to 410 GHz and incoherent detection up to 10 THz as well as an almost fully integrated receiver working from 225–280 GHz have been demonstrated using CMOS. Despite the fact that f <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">max</inf> of NMOS transistors has peaked around 320 GHz, it should be possible to coherently detect signals at frequencies beyond 1 THz and with some straightforward modification of processes, to incoherently detect signals at 40 THz in CMOS.

Recent grants

Frequent coauthors

  • Paul Helminger

    133 shared
  • Eric Herbst

    121 shared
  • Ivan R. Medvedev

    Wright State University

    92 shared
  • Douglas T. Petkie

    Worcester Polytechnic Institute

    83 shared
  • Thomas M. Goyette

    University of Massachusetts Lowell

    78 shared
  • Manfred Winnewisser

    The Ohio State University

    57 shared
  • Christopher F. Neese

    The Ohio State University

    42 shared
  • K. V. L. N. Sastry

    40 shared

Education

  • Ph.D., Physics

    Duke University

    1969
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