About

Andreas Beling is a Professor in the Department of Electrical and Computer Engineering at the University of Virginia. He received his Diploma in physics (M.Sc.) from the University of Bonn, Germany, in 2000, and his Ph.D. in Electrical Engineering from the Technical University Berlin, Germany, in 2006. His professional experience includes working as a staff scientist in the photonics division at the Heinrich-Hertz-Institut in Berlin from 2001 to 2006, and as a Research Associate at the University of Virginia from 2006 to 2008. He also has industry experience as a project manager working on coherent receivers for fiber optic communication systems. Beling returned to UVa in late 2010 as a Research Scientist and became an Assistant Professor in 2013. His research interests encompass optoelectronic devices, millimeter-wave and terahertz electronics, and wireless and optical communication systems. Throughout his career, he has authored or co-authored over 230 technical papers, three book chapters, and holds four patents. Beling has served on various technical program committees for prominent conferences in his field and has held editorial roles, including being an Associate Editor of the IEEE/OSA Journal of Lightwave Technology from 2014 to 2020. He is a senior member of the Optical Society (OSA) and the Institute of Electrical and Electronics Engineers (IEEE).

Research topics

• Optics
• Materials science
• Optoelectronics
• Physics
• Computer Science
• Telecommunications

Selected publications

• Low-loss phononic integrated circuits based on a silicon nitride-lithium niobate platform

  arXiv (Cornell University) · 2026-03-29

  articleOpen access

  Microwave-frequency acoustic waves in solids have emerged as a versatile platform for both classical and quantum applications. While phononic integrated devices and circuits are being developed on various material platforms, an ideal phononic integrated circuit (PnIC) platform should simultaneously support low-loss waveguide structures, high-quality-factor resonators, high-performance modulators, and efficient electromechanical transducers. Here, we establish a low-loss gigahertz-frequency PnIC platform based on patterned thin-film silicon nitride (SiN) on lithium niobate (LN) substrate. We develop low-loss PnIC building blocks including waveguides, directional couplers, and high-quality-factor (high-Q) ring resonators. As an application, we demonstrate a 1-GHz phononic oscillator based on a ring resonator, reaching a low phase noise of -159.0 dBc/Hz at a 100-kHz offset frequency. Our low-loss PnICs could meet the requirements in microwave acoustics, quantum phononics, and integrated hybrid systems combining phonons, photons, superconducting qubits, and solid-state defects.

  PublisherOA PDF

• Wide-band millimetre-wave synthesizer using microresonator-soliton photomixing

  Nature Photonics · 2026-05-05

  article
  PublisherDOI

• Wide-band millimeter-wave synthesizer using microresonator-soliton photomixing

  Figshare · 2026-05-06 · 1 citations

  datasetOpen access

  Source data for paper "Wide-band millimeter-wave synthesizer using microresonator-soliton photomixing"

  PublisherDOI

• Universal loss and gain characterization inside photonic integrated circuits

  Figshare · 2026-01-01

  datasetOpen access

  Data for paper "Universal loss and gain characterization inside photonic integrated circuits"

  PublisherDOI

• Characterization of edge-coupled digital alloy AlInAsSb SPADs

  2026-03-05

  article
  PublisherDOI

• Low-loss phononic integrated circuits based on a silicon nitride-lithium niobate platform

  arXiv (Cornell University) · 2026-03-29

  preprintOpen access

  Microwave-frequency acoustic waves in solids have emerged as a versatile platform for both classical and quantum applications. While phononic integrated devices and circuits are being developed on various material platforms, an ideal phononic integrated circuit (PnIC) platform should simultaneously support low-loss waveguide structures, high-quality-factor resonators, high-performance modulators, and efficient electromechanical transducers. Here, we establish a low-loss gigahertz-frequency PnIC platform based on patterned thin-film silicon nitride (SiN) on lithium niobate (LN) substrate. We develop low-loss PnIC building blocks including waveguides, directional couplers, and high-quality-factor (high-Q) ring resonators. As an application, we demonstrate a 1-GHz phononic oscillator based on a ring resonator, reaching a low phase noise of -159.0 dBc/Hz at a 100-kHz offset frequency. Our low-loss PnICs could meet the requirements in microwave acoustics, quantum phononics, and integrated hybrid systems combining phonons, photons, superconducting qubits, and solid-state defects.

  PublisherDOI

• Universal loss and gain characterization inside photonic integrated circuits

  Figshare · 2026-01-01 · 1 citations

  datasetOpen access

  Data for paper "Universal loss and gain characterization inside photonic integrated circuits"

  PublisherDOI

• Wide-band millimeter-wave synthesizer using microresonator-soliton photomixing

  Figshare · 2026-05-06

  datasetOpen access

  Source data for paper "Wide-band millimeter-wave synthesizer using microresonator-soliton photomixing"

  PublisherDOI

• Heterogeneously integrated waveguide-coupled InGaAs/InP SACM avalanche photodiodes on silicon nitride for 1550 nm

  Optics Express · 2026-02-17

  articleOpen accessSenior author

  The silicon nitride/silicon (Si 3 N 4 /Si) photonic platform has attracted significant interest due to its ultra-low-loss waveguides and high-performance optical components. Progress in heterogeneous integration has enabled the development of active photonic devices on Si 3 N 4 , including PIN waveguide photodiodes. However, to the best of our knowledge, an integrated avalanche photodiode (APD) with internal gain operating at 1550 nm wavelength has not been demonstrated to date. Here, we report on the design, fabrication, and characterization of InP/InGaAs separate absorption, charge, and multiplication (SACM) APDs heterogeneously integrated on Si 3 N 4 waveguides. Our APDs have a dark current of 5 nA near breakdown at room temperature, a multiplication gain of 166, and an internal responsivity of 0.61 A/W at unity gain. The 3-dB bandwidth is 4.2 GHz, and we demonstrate open eye diagrams at 7.5 Gbps.

  PublisherDOI

• Heterogeneously integrated InGaAs/InP avalanche photodiodes on silicon nitride waveguides for 1550nm wavelength

  2026-03-04

  articleSenior author

  We demonstrate a separate absorption, charge and multiplication (SACM) avalanche photodiode (APD) on silicon nitride (Si₃N₄) waveguide using an adhesive die-to-wafer bonding technique. Our heterogeneous APDs have a low dark current of 10 nA at -27 V. A 120 μm long APD has 77% internal quantum efficiency at unity gain, and a responsivity of 14 A/W at -29 V for -11.9 dBm input optical power at 1550 nm wavelength.

  PublisherDOI

Recent grants

• ASCENT: Photonically Driven mm-Wave Communication Platform

  NSF · $1.3M · 2020–2025

Frequent coauthors

• Joe C. Campbell

  University of Virginia

  155 shared

• Keye Sun

  72 shared

• Jesse Morgan

  44 shared

• Qianhuan Yu

  University of Virginia

  40 shared

• Xiaojun Xie

  Southwest Jiaotong University

  39 shared

• Qiugui Zhou

  University of Virginia

  37 shared

• Huapu Pan

  IBM (United States)

  34 shared

• Qinglong Li

  Army Medical University

  34 shared

Education

• M.S.

  University of Bonn

  2000

• Ph.D., Electrical Engineering

  Technical University Berlin

  2006

Awards & honors

• IEEE/OSA Journal of Lightwave Technology Associate Editor (2…
• Primary Guest Editor of the IEEE Journal of Selected Topics…
• Technical Program Subcommittee Chair at OFC (2013)
• Technical Program Subcommittee Chair at IPR (2017)