About

Thomas G. Bever is a Regents' Professor at the University of Arizona, working closely with undergraduates and graduate students across disciplines including Linguistics, Second Language Acquisition and Teaching, Psychology, Neuroscience, and Education. His research and teaching focus on the revival of biolinguistics, which studies language as a biological object through the lens of evolution, utilizing experimental and observational tools from biology. His work aims to identify language universals that are unique to language as opposed to properties of general cognition, maturation, perception, or motor behaviors. Bever's research extends to studying language-like universal processes outside of language, such as in music, spatial cognition, visual perception, animal cognition, child development, bilingual organization, second language learning, motion perception, and conspecific recognition. A current theme in his laboratory involves examining the neurological organization for language and cognition as a function of individual and familial left-handedness, providing insights into the epigenetic dynamics involved in brain organization for higher functions in children. His lab is equipped with computers, experimental booths, EEG systems for assessing functional brain organization during language and cognitive behaviors, and eye-movement trackers. His research interests include cognitive science, biolinguistics, psycholinguistics, and sentence processing, with specific focus areas such as genetic variation in language knowledge, behavior and neurological organization, second language learning, reading, language and consciousness, cognition, and aesthetics.

Research topics

• Medicine
• Internal medicine
• Sociology
• Radiology
• Neuroscience
• Cognitive science
• Epistemology
• Psychology

Selected publications

• The Time Course for Language Acquisition in Biologically Distinct Populations

  2026-01-05

  book-chapterSenior author

  The present study provides evidence that individuals who have different patterns of cerebral lateralization and who develop along different maturational time courses can attain comparable levels of language proficiency. Right-handed individuals with left-handed family members (left-handed familials, LHFs) showed a shorter sensitive period for language acquisition than did right-handed individuals with only right-handed family members (right-handed familials, RHFs). The shorter sensitive period for LHFs may be due to a focus on non-linguistic, word-based conceptual information during language acquisition. RHFs may focus on grammatical relations during language acquisition, which matures later than lexical knowledge. This suggests that there may be different patterns of cerebral lateralization for language in all normal populations as a function of familial handedness.

  PublisherDOI

• The Canonical Form Constraint

  2026-01-05

  book-chapter1st authorCorresponding

  Source: Jiansheng Guo, Elena Lieven, Nancy Budwig, Susan Ervin- Tripp, Keiko Nakamura and Şeyda Özçalıķan (eds), Cross-linguistic Approaches to the Psychology of Language, Oxford: Oxford University Press, 2008, pp. 475–92.

  PublisherDOI

• Even deeper problems with neural network models of language

  Behavioral and Brain Sciences · 2023-01-01 · 1 citations

  article1st authorCorresponding

  We recognize today's deep neural network (DNN) models of language behaviors as engineering achievements. However, what we know intuitively and scientifically about language shows that what DNNs are and how they are trained on bare texts, makes them poor models of mind and brain for language organization, as it interacts with infant biology, maturation, experience, unique principles, and natural law.

  PublisherDOI

• Index

  2021-12-06

  paratextOpen access

  t" denotes tables and "n" denotes footnotes.

  PublisherOA PDFDOI

• Feasibility Of Sub-millisievert Ct Scan In Quantitative Thoracic Bone Mineral Density Assessment With Multi-detector Row Computerized Tomography

  Journal of cardiovascular computed tomography · 2021-07-01

  article
  PublisherDOI

• Anti-hypertensive Medications Can Reduce The Vertebral Bone Mineral Loss In Aging Hypertensive Patients

  Journal of cardiovascular computed tomography · 2021

  • Medicine
  • Internal medicine
  PublisherDOI

• How Cognition came into being

  Cognition · 2021 · 4 citations

  1st authorCorresponding
  • Sociology
  • Psychology
  • Cognitive science
  PublisherDOI

• Ability Of Assessing Osteoporosis And Osteoporotic Vertebral Fracture In The General Population When Using Thoracic Quantitative Computed Tomography: A Comparison Study Between Low-dose Thoracic Quantitative Computed Tomography And Lumbar Dual-energy X-ray Absorptiometry

  Journal of cardiovascular computed tomography · 2021-07-01

  article
  PublisherDOI

• Screening Patients At Risk Of Age-related Fragility Vertebral Fracture In The General Population Using Multiple-row Detector Quantitative Computed Tomography With Chest Or Heart Scan

  Journal of cardiovascular computed tomography · 2020

  • Medicine
  • Radiology
  • Internal medicine
  PublisherDOI

• (Invited) Integration of an Epitaxial-Base-Link HBT Device with f_T = 300GHz, f_max 480GHz in 90nm CMOS

  ECS Meeting Abstracts · 2020-11-23

  articleSenior author

  SiGe HBT based BiCMOS technologies have found widespread use in millimeter-Wave (mmW) applications such as high-speed communication and automotive radar, but are also receiving increased attention for operating frequencies above 100GHz. The drive for higher operating frequencies while reducing power consumption continues to fuel the development of new BiCMOS technologies with HBTs featuring higher switching speeds (f max ) integrated with smaller, more power efficient and cost effective CMOS nodes. There is strong evidence however, that in volume production double poly self-aligned (DPSA) HBT architectures may be limited to f max of 400GHz [i] , [ii] , [iii] , [iv] , [v] , [vi] . Alternative HBT architectures to overcome this limitation have been proposed [vii] , [viii] , [ix] . In this paper we report the successful integration of a SiGe HBT module with f T = 300GHz, f max = 480GHz in a 90nm BiCMOS technology platform. Building on previous studies by IHP [x] and Infineon [xi] the Epitaxial-Base-Link process flow was further adapted for compatibility to the 90nm CMOS base technology. The new technology platform features seven Cu metal layers high quality passives including a TaN resistor and a MiM capacitor positioned between metal levels 6 and 7 for low parasitic substrate coupling. One metal layer was added compared to the 130nm platform to facilitate the transition from thin wire to RF metallization. Figure 1 shows a TEM cross section of one of the first successful 90nm BiCMOS runs. Key challenges of the integration into the new CMOS node will be summarized in the presentation. The same device showed nearly ideal Gummel characteristics. CML ring oscillators with a design width EW of 190nm and 2.8 µm length achieved a wafer mean gate delay of 1.86ps with a standard deviation of 1.9%. Acknowledgment: This work was supported by the European Commission and the German Federal Ministry of Education and Research (BMBF) under project ref# 16ESE0202S ECSEL-TARANTO. [i] V. P. Trivedi et al., “A 90nm BiCMOS Technology featuring 400 GHz fMAX SiGe:C HBT”, in Bipolar / BiCMOS Circuits and Technology Meeting, 2016, pp. 60-63. [ii] V. Jain et al., “Device and circuit performance of SiGe HBTs in 130nm BiCMOS process with fT/fmax of 250/330GHz,” IEEE Bipolar/BiCMOS Circuits and Technology Meeting, 2014, pp. 96-99. [iii] P. Chevalier et al., “A 55 nm triple gate oxide 9 metal layers SiGe BiCMOS technology featuring 320 GHz fT / 370 GHz fMAX HBT and high-Q millimeter-wave passives,” in International Electron Devices Meeting (IEDM), 2014, pp. 3.9.1-3.9.3. [iv] J. Pekarik et al., “A 90nm SiGe BiCMOS technology for mm-wave and high-performance analog applications,” in IEEE Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2014, pp. 92–95. [v] P. Hurwitz, R. Kanawati, K. Moen, E. Preisler, S. Chaudhry and M. Racanelli, "Advances in RF foundry technology for wireless and wireline communications," 2016 IEEE 16th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), Austin, TX, 2016, pp. 5-8. [vi] J. Böck et al., “SiGe HBT and BiCMOS process integration optimization within the DOTSEVEN project”, in Bipolar / BiCMOS Circuits and Technology Meeting, 2015, pp. 121-124. [vii] Q. Z. Liu et al, “SiGe HBTs in 90nm BiCMOS Technology demonstrating fT / fmax 285GHz / 475GHz through simultaneous reduction of base resistance and extrinsic collector capacitance”, ECS transactions, 64(6) , 2014, pp. 285 – 294. [viii] A. Fox, B. Heinemann, R. Barth, S. Marschmeyer, C. Wipf and Y. Yamamoto, "SiGe:C HBT architecture with epitaxial external base," 2011 IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Atlanta, GA, 2011, pp. 70-73. [ix] V.T. Vu, D. Celi, T. Zimmer, S. Fregonese, P. Chevalier, “Advanced Si/SiGe HBT architecture for 28-nm FD-SOI BiCMOS”, in Bipolar / BiCMOS Circuits and Technology Meeting, 2016, pp. 64-67. [x] B. Heinemann et al., "SiGe HBT with fx/fmax of 505 GHz/720 GHz," 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco, CA, 2016, pp. 3.1.1-3.1.4. [xi] D. Manger et al., "Integration of SiGe HBT with fT=305 GHz, fmax=537GHz in 130nm and 90nm CMOS," 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS), San Diego, CA, 2018, pp. 76-79. Figure 1

  PublisherDOI

Frequent coauthors

• David Townsend

  University of Toronto

  49 shared

• Kim Daugherty

  Louisiana State University

  36 shared

• Universitycfsouhem California

  Kansas State University

  36 shared

• Kevin Jordan

  Rutgers Sexual and Reproductive Health and Rights

  36 shared

• Suzanne Loven

  Kansas State University

  36 shared

• State College

  Kansas State University

  36 shared

• Monika J. B. Eberhard

  Universität Hamburg

  36 shared

• Steen F. Larsen

  36 shared