XPS Study of Tungsten and Barrier Film Transition at Various Stages of Chemical Mechanical Polishing Endpoint and of Surface Compositions Post-CMP Cleaning

ECS Journal of Solid State Science and Technology · 2017-01-01 · 7 citations

The present study aims to determine wafer surface film compositions at various stages of optical end point during W CMP process. Wafers taken at reflectance peak time, peak plus time, slope time, end point time and overpolish time were analyzed by XPS at various locations of the wafer, with special focus on the compositional identification of the visual "residues". Results showed that W and barrier film removal proceed in a non-uniform manner at XPS probe depth scale of ∼6 nm. At the optical reflectance peak time the wafer is substantially covered with W, and Ti barrier only appeared on the edge of the wafer due to center slow - edge fast removal profile of the polishing. Using peak to end point time to calculate Ti barrier removal rate may under-estimate the true barrier polishing time and led to artificially lower barrier rate. Ammonia-based post CMP cleaning process and its impact on W film surface composition is also discussed.

A capacitance detection circuit for on-chip microparticle manipulation

2014-06-01 · 2 citations

This study proposes a capacitance detection circuit for on-chip microparticle manipulation. The designed circuit employs the charge-based capacitance measurement technique to convert a capacitance value to a digital output code. Experimental results reveal capacitance measurement within error of 4 fF.

An ultra-low-voltage power-supply monitor circuit for wireless-powered microparticle manipulation system

IEICE Technical Report; IEICE Tech. Rep. · 2014-01-21

Low-Voltage-Operation Capacitance Detection Circuit for On-Chip Microparticle Manipulation

IEICE Technical Report; IEICE Tech. Rep. · 2014-06-26

The experimental study of weak rough surface characteristic of laser scatter

Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE · 2013-09-11

In this paper, the research meaning and application of polarization characteristic of laser backscattering of the rough surface has been introduced. By designing experimental optical, using incident light of 632.8nm wavelength red light, the experimental study of light scattering characteristics of the existing roughness blocks and other typical rough target surfaces have been done. Analysis results show that scattered light intensity with the measured roughness of the target, the incident angle has a relationship. If the roughness of the measured target is changed, the corresponding scattering intensity and the degree of polarization will change. And if the materials of the measured targets are not the same, the backscatter intensity trends are not identical. The research of light scattering properties of typical rough targets has a positive significance to further study of the target feature.

Detail research on the traditional inverter and Z-source inverter

2011-12-01 · 12 citations

This paper summarizes the basic module of power transform circuit through the research of the various inverter circuits, and gains the essence of power transform system. It analyzes the advantages and disadvantages through the research of voltage-source inverter and current-source inverter, and points out the characteristics of the circuit. The circuits are explained with the essence of power transform system. The unique characteristics different from other inverter of the Z-source inverter are analyzed. At last, the modules of a power electronic circuit which contains inductive module and switch module as well as diode module are proposed by the comparison of the differences among the three inverter circuits.

A rectifier structure for UHF RFID transponder with high efficiency

IEICE Electronics Express · 2010-01-01 · 3 citations

This paper presents a UHF rectifier structure to overcome the drawbacks of conventional rectifiers, which cannot simultaneously realize high power conversion efficiency (PCE) and arbitrarily high output voltage. In accordance with our clear analysis policy, a novel rectifier structure based on Dickson charge pump has been developed. Also, a single-stage rectifier circuit has been designed and fabricated in a standard 0.18-µm complementary metal oxide semiconductor (CMOS) process. Experimental results show that this rectifier can provide 1V voltage supply at a PCE of 32%, -30dBm incident RF power.

Problems of interconnection of large wind farms

East China Electric Power · 2008-01-01

The differences between the wind farm and the conventional power plants are presented,and the working principles of two kinds of wind power systems,the constant speed constant frequency system and the variable speed constant frequency system,are analyzed,as well as the status quo of their interconnection and major problems.The influence of wind farm interconnection on the grid are illuminated,e.g.it will exert impact on the grid during the interconnection process and its operation will affect the power quality,the protection devices,the grid′s frequency,and the operational cost of the power system.

Characterization of a Water-insoluble Polymer Producing Bacterium Enterobacter sp. CJF-002 for MEOR

Bulletin of The Japan Petroleum Institute · 2004-07-01

Realization of high-efficiency/high-luminance small-molecule organic light-emitting diodes: synergistic effects of siloxane anode functionalization/hole-injection layers, and hole/exciton-blocking/electron-transport layers

Applied Physics Letters · 2003-01-16 · 53 citations

High-efficiency/high-luminance small-molecule organic light-emitting diodes (OLEDs) are fabricated by combining thin, covalently-bound triarylamine hole injection/adhesion interlayers with hole- and exciton-blocking/electron transport interlayers in tris(8-hydroxyquinolato)aluminum (III) (Alq)-based OLEDs. Power and forward external quantum efficiencies as high as 15.2 lm/W and 4.4±0.5%, respectively, and turn-on voltages ∼4.5 V are achieved in devices of the structure ITO/TPDSi2/NPB/Alq:DIQA/BCP/Li/MgAg [NPB=(N,N′-di(1-napthl)-N,N′-diphenyl benzidine)] TPDSi2 interlayers are straightforwardly fabricated by spin-casting N,N′-diphenyl-N,N′- bis(p-trichlorosilylpropylphenyl)(1,1′-biphenyl)-4,4′-diamine TPDSi2 onto the ITO surface, while 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP) interlayers are introduced by thermal evaporation. High quantum efficiencies are attributed to the synergistic enhanced hole/electron injection and exciton confinement effects of the TPDSi2 and BCP interlayers, respectively.