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Qingyun Li

Qingyun Li

· Assistant Professor Geochemistry, Environmental Science/EngineeringVerified

Stony Brook University · Geosciences

Active 1989–2026

h-index38
Citations6.0k
Papers271109 last 5y
Funding$337k
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About

Out Lab explores geochemical reactions in environmental and energy-related systems and examines their impacts on porous media. Currently we have three research directions: (1) Water-rock interactions in geotechnical systems; (2) Mineral nucleation and precipitation; and (3) Geochemistry in environmental and energy-related systems.

Research topics

  • Condensed matter physics
  • Physics
  • Quantum mechanics
  • Geometry
  • Mathematics

Selected publications

  • Observation and control of the weak topological insulator state in ZrTe5

    Nature Communications · 84 citations

    • Physics
    • Condensed matter physics
    • Quantum mechanics

    Abstract A quantum spin Hall (QSH) insulator hosts topological states at the one-dimensional (1D) edge, along which backscattering by nonmagnetic impurities is strictly prohibited. Its 3D analogue, a weak topological insulator (WTI), possesses similar quasi-1D topological states confined at side surfaces. The enhanced confinement could provide a route for dissipationless current and better advantages for applications relative to strong topological insulators (STIs). However, the topological side surface is usually not cleavable and is thus hard to observe. Here, we visualize the topological states of the WTI candidate ZrTe5 by spin and angle-resolved photoemission spectroscopy (ARPES): a quasi-1D band with spin-momentum locking was revealed on the side surface. We further demonstrate that the bulk band gap is controlled by external strain, realizing a more stable WTI state or an ideal Dirac semimetal (DS) state. The highly directional spin-current and the tunable band gap in ZrTe5 will provide an excellent platform for applications.

  • Temperature-dependent passivation and pitting behavior of Fe-based bulk metallic glass and its HVOF-sprayed amorphous alloy coating in chloride solution

    Surface and Coatings Technology · 2026-04-13

    article
  • OpenPort Protocol: A Security Governance Specification for AI Agent Tool Access

    SSRN Electronic Journal · 2026-01-01

    preprintOpen accessSenior author
  • Effect of long-term scour and scour protection on the vertical bearing behaviour of monopile foundation: A field-integrated numerical study

    Ocean Engineering · 2026-04-13

    articleOpen access1st authorCorresponding
  • Superhydrophobic, active anti-corrosion, and solar anti-icing coating with fast self-healing properties

    Nano Research · 2026-04-01

    articleOpen access1st authorCorresponding

    Corrosion and icing considerably threaten the service safety of magnesium (Mg) alloys in aerospace and transportation industries. Although superhydrophobic coatings offer effective anti-corrosion and anti-icing functions, yet they are limited by the susceptibility of coatings to failure due to physical damage or the capillary condensation phenomenon. Herein, a multifunctional integrated coating is reported, which endows the coated Mg alloys with excellent superhydrophobicity, active anti-corrosion performances, anti-icing properties, and fast self-healing capabilities (SAAS). The experimental and theoretical results reveal that the layered double hydroxide (LDH) modified and intercalated with sodium laurate (La) acts as nanoreservoirs, which releases La corrosion inhibitors through an anion-exchange process to effectively retard corrosion. Based on the incorporation of MXene, the SAAS coating reveals full-spectrum high absorption and efficient photo-thermal conversion, and meanwhile causes a 61 ℃ surface temperature under 1.0 sun illumination. This photothermal effect effectively prevents the adhesion and accumulation of supercooled droplets. Furthermore, near-infrared (NIR) irradiation induces macromolecular chains migration and phase transition, enabling fast self-healing of coating damage. This study not only provides a novel strategy for enhancing the ability of aircraft skins but also offers new insights into the design of multifunctional coatings.

  • Replication Data for: High-resolution Measurements of Thermal Conductivity Matrix and Search for Thermal Hall Effect in La2CuO4

    Open MIND · 2026-04-08

    datasetOpen accessSenior author

    Replication Data for: High-resolution Measurements of Thermal Conductivity Matrix and Search for Thermal Hall Effect in La2CuO4

  • Single-crystalline orthorhombic GdAlGe as a rare-earth magnetic Dirac nodal-line metal

    Physical review. B./Physical review. B · 2025-09-24 · 1 citations

    articleOpen accessSenior author

    Crystal engineering is a method for discovering new quantum materials and phases, which may be achieved by external pressure or strain. Chemical pressure is unique in that it generates internal pressure perpetually to the lattice. As an example, GdAlSi from the rare-earth ($R$) $R$Al$X$ ($X =$ Si or Ge) family of Weyl semimetals is considered. Replacing Si with the larger isovalent element Ge creates sufficiently large chemical pressure to induce a structural transition from the tetragonal structure of GdAlSi, compatible with a Weyl semimetallic state, to an orthorhombic phase in GdAlGe, resulting in an inversion-symmetry-protected nodal-line metal. We find that GdAlGe hosts an antiferromagnetic ground state with two successive orderings, at $T_\mathrm{N1}$ = 35 K and $T_\mathrm{N2}$ = 30 K. In-plane isothermal magnetization shows a magnetic field induced metamagnetic transition at 6.2 T for 2 K. Furthermore, electron-hole compensation gives rise to a large magnetoresistance of $\sim 100\%$ at 2 K and 14 T. Angle-resolved photoemission spectroscopy measurements and density functional theory calculations reveal a Dirac-like linear band dispersion over an exceptionally large energy range of $\sim$ 1.5 eV with a high Fermi velocity of $\sim 10^6$ m/s, a rare feature not observed in any magnetic topological materials.

  • Electronic structure complexity and extremely large magnetoresistance in antiferromagnetic semimetal <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>SmAgSb</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math>

    Physical review. B./Physical review. B · 2025-11-07

    articleSenior author

    ${\mathrm{SmAgSb}}_{2}$, a layered magnetic semimetal in the tetragonal $RT{\mathrm{Sb}}_{2}$ family ($R=\mathrm{Y}$, Sc, rare earth; $T$ = transition metal), is known to exhibit extremely large magnetoresistance (XMR) below its antiferromagnetic (AFM) transition temperature. In this work, we present a comprehensive investigation combining magnetotransport measurements, density functional theory calculations accounting for electron correlation, and angle-resolved photoemission spectroscopy. Our results reveal a complex electronic structure characterized by a multiband Fermi surface and intricate magnetic ground states. We demonstrate that simple two-band models, previously employed in the literature, fail to consistently describe the observed transport phenomena. Notably, we report an XMR of approximately $25\phantom{\rule{0.16em}{0ex}}200%$ at 2 K under a 14 T magnetic field, significantly exceeding earlier reports for this material family and rivaling the performance of prominent nonmagnetic XMR systems. This pronounced enhancement below ${T}_{N}$ suggests that the XMR originates from a combination of multiband electron-hole compensation and enhanced magnetic scattering in this correlated AFM semimetal.

  • Large non-saturating Nernst thermopower and magnetoresistance in compensated semimetal ScSb

    Materials Today Physics · 2025-07-25

    articleOpen accessSenior authorCorresponding
  • Low threshold InAs/InP quantum dot lasers on Si

    2025-04-14 · 1 citations

    article

    We have developed low threshold InP-based L-band quantum (QD) lasers monolithically grown on Si substrates for photonic integration. To overcome the fundamental challenges of growing high-density, high uniformity QDs on InP-based material system, QD thickness in combination with a modified indium flush technique was adopted, resulting in a low threshold current density of 1.35 kA/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and pulsed lasing up to 100 °C. These results represent progress in C-/L-band QD laser development on Si, highlighting the potential for high-performance semiconductor light source for long-haul telecommunication applications.

Recent grants

Frequent coauthors

  • Genda Gu

    Brookhaven National Laboratory

    190 shared
  • Zhiguo Chen

    84 shared
  • Jianzhou Zhao

    82 shared
  • Wenhui Li

    82 shared
  • Weikang Wu

    Shandong University

    82 shared
  • Youguo Shi

    Institute of Physics

    82 shared
  • X.H. Deng

    82 shared
  • Jianlin Luo

    81 shared

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