About

Tony Heinz is a Professor of Applied Physics and of Photon Science at Stanford University. His research focuses on nanoscience and quantum engineering, specifically investigating the electronic and optical properties of nanoscale systems such as quantum dots, carbon nanotubes, and two-dimensional materials including graphene and transition metal dichalcogenides like MoS2. His work aims to understand the effects of quantum confinement, strong environmental interactions, and many-body phenomena in these reduced-dimensionality materials, which differ significantly from bulk materials. Heinz employs optical spectroscopy techniques spanning from THz to UV, often probing individual nanostructures and ultrafast dynamics through femtosecond laser spectroscopy, to elucidate the properties and potential applications of these materials in photonics and electronic devices. Additionally, his research encompasses condensed matter physics, exploring electronic states and phonons in nanoscale structures, and developing advanced spectroscopic capabilities such as terahertz time-domain spectroscopy and coherent x-ray radiation to study ultrafast surface and nanoscale dynamics.

Research topics

• Physics
• Optics
• Materials science
• Quantum mechanics
• Condensed matter physics
• Optoelectronics
• Chemistry
• Atomic physics
• Chemical physics
• Nanotechnology
• Crystallography

Selected publications

• Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions

  Zenodo (CERN European Organization for Nuclear Research) · 2026-04-10 · 1 citations

  datasetOpen access

  This dataset contains the raw experimental data associated with the manuscript "Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions". The data include angle resolved photoemission measurements, photoluminescence measurements, and supplementary experimental files used to generate the figures in the manuscript.

  PublisherDOI

• Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions

  Zenodo (CERN European Organization for Nuclear Research) · 2026-04-10

  datasetOpen access

  This dataset contains the raw experimental data associated with the manuscript "Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions". The data include angle resolved photoemission measurements, photoluminescence measurements, and supplementary experimental files used to generate the figures in the manuscript.

  PublisherDOI

• Electric-field-tuned consecutive topological phase transitions between distinct correlated insulators in moire MoTe2/WSe2 heterobilayer

  arXiv (Cornell University) · 2026-02-17

  preprintOpen access

  Consecutive topological phase transitions (TPTs) between strongly correlated electronic phases that differ simultaneously in symmetry breaking and topological order are of fundamental interest in condensed matter physics, yet are rarely realized experimentally. We report two consecutive electric-field-driven TPTs at half filling (nu = 1) in angle-aligned MoTe2/WSe2 moire heterobilayers. With increasing out-of-plane displacement field, a geometrically frustrated Mott insulator evolves into a ferromagnetic quantum anomalous Hall (QAH) Mott insulator, i.e., a spin-polarized topological Mott insulator without an observable charge-gap closure, and subsequently into an antiferromagnetic, valley-coherent Mott insulator (VC-AFM) accompanied by a continuous charge-gap collapse and the emergence of a critical metallic state. Layer-resolved magnetic circular dichroism (MCD), magneto-transport, and compressibility measurements jointly determine the phase diagram. The high-field evolution of the antiferromagnetic state reveals a metamagnetic-like transition at a critical field B*, above which a Chern insulating transport response reappears. Our results establish the MoTe2/WSe2 moire platform as a tunable realization of an extended Kane-Mele-Hubbard model hosting sequential correlation-topology-intertwined transitions.

  PublisherDOI

• Updates on scientific and R&D highlights at SLAC MeV-UED facility

  Open MIND · 2026-01-29

  article

  Ultrafast electron diffraction using MeV energy beams (MeV-UED) has enabled unprecedented scientific opportunities in the study of ultrafast structural dynamics in a variety of gas, liquid and solid-state systems. The SLAC MeV-UED program began in 2014 and became an LCLS user facility in 2019. This work will review recent R&D efforts for enhancing the resolution, flux and electron detection of the MeV-UED instrument. Additionally, the integration of Al/ML techniques is being explored to optimize facility operations and accelerate scientific discovery. In all, these will open new avenues for explorations in key areas of ultrafast science.

  DOI

• Time-domain terahertz emission spectroscopy on van der Waals materials

  MRS Communications · 2026-04-22

  articleOpen accessSenior author

  Abstract Time-domain terahertz (THz) emission spectroscopy provides a direct method to probe transient photo-currents by recording the emitted terahertz electric field. Although the basic principles of THz surface emission have been understood for more than 30 years, the constant progress in ultrafast laser science to ever shorter pulses, the development of new materials and enhanced sensitivity promote THz emission spectroscopy as a reliable method to gain insights into charge carrier dynamics with unprecedented precision. It provides a versatile tool to study ultrafast processes, such as plasmon-driven hot carriers, dynamics of Dirac fermions, interfacial charge transfer, coherent phonon emission and quantum beating, to name only a few. However, despite the rapidly growing body of research on van der Waals materials, especially in their low-dimensional limit, THz emission spectroscopy has only been applied to a limited extent in these material systems. In this prospective, we review time-domain THz emission spectroscopy as a complementary approach to probe ultrafast charge carrier dynamics and the material’s nonlinear response. After a description of the experimental method, we report on THz emission spectroscopy of bulk and 2D van der Waals materials with special focus on graphene and transition metal dichalcogenide layers. Graphical abstract

  PublisherOA PDFDOI

• Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions

  ArXiv.org · 2026-02-03

  articleOpen access

  Atomic-scale control over band alignment in single-layer lateral heterostructures (LHSs) of dissimilar transition metal dichalcogenides (TMDCs) is critical for nextgeneration electronic, optoelectronic, and quantum technologies. However, direct experimental access to interfacial electronic states with nanometer precision remains a significant challenge. Here, we employ angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) to directly map the epitaxial alignment and valence band evolution across MoSe2-WSe2 LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets, in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.

  PublisherOA PDF

• Direct Nanoscale Mapping of Band Alignment in Single-Layer Semiconducting Lateral Heterojunctions

  Nano Letters · 2026-04-13

  article

  LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.

  PublisherDOI

• Interfacial control of hot-carrier extraction and photostability in two-dimensional materials

  ArXiv.org · 2026-05-08

  articleOpen access

  Two-dimensional transition metal dichalcogenides (TMDCs) are promising materials for next-generation optoelectronic devices, yet their implementation is hindered by limited sample stability and challenges in forming reliable electrical contacts. Here, by utilizing time-domain THz emission spectroscopy we directly probe charge carrier dynamics in monolayer WS2 on gold (Au) and fused silica (SiO2) as a function of interface morphology. For laser excitation above the band gap of WS2, we independently extract effective transport times for both electrons and holes and find that discontinuous WS2 contacts on rough Au generate larger net photocurrents than uniform, strongly coupled interfaces - a counterintuitive observation attributed to imbalanced electron and hole transfer from WS2 to Au. Crucially, we demonstrate that ultrafast charge extraction and separation suppress recombination-driven energy release and thereby prevent photo-induced degradation under ambient conditions, eliminating the need for encapsulation. These findings redefine interfacial design as a central control parameter for both performance and stability in 2D optoelectronic devices.

  PublisherOA PDF

• Electric-field-tuned consecutive topological phase transitions between distinct correlated insulators in moire MoTe2/WSe2 heterobilayer

  arXiv (Cornell University) · 2026-02-17

  articleOpen access

  Consecutive topological phase transitions (TPTs) between strongly correlated electronic phases that differ simultaneously in symmetry breaking and topological order are of fundamental interest in condensed matter physics, yet are rarely realized experimentally. We report two consecutive electric-field-driven TPTs at half filling (nu = 1) in angle-aligned MoTe2/WSe2 moire heterobilayers. With increasing out-of-plane displacement field, a geometrically frustrated Mott insulator evolves into a ferromagnetic quantum anomalous Hall (QAH) Mott insulator, i.e., a spin-polarized topological Mott insulator without an observable charge-gap closure, and subsequently into an antiferromagnetic, valley-coherent Mott insulator (VC-AFM) accompanied by a continuous charge-gap collapse and the emergence of a critical metallic state. Layer-resolved magnetic circular dichroism (MCD), magneto-transport, and compressibility measurements jointly determine the phase diagram. The high-field evolution of the antiferromagnetic state reveals a metamagnetic-like transition at a critical field B*, above which a Chern insulating transport response reappears. Our results establish the MoTe2/WSe2 moire platform as a tunable realization of an extended Kane-Mele-Hubbard model hosting sequential correlation-topology-intertwined transitions.

  PublisherOA PDF

• Exciton-polaron Umklapp scattering in Wigner crystals

  ArXiv.org · 2026-01-17

  articleOpen access

  Strong Coulomb interactions in two-dimensional (2D) semiconductors give rise to tightly bound excitons, exciton polarons, and correlated electronic phases such as Wigner crystals (WCs), yet their mutual interplay remains poorly understood. Here we report the observation of multi-branch excitonic Umklapp scattering in both electron and hole WCs realized in ultraclean monolayer WSe$_2$, exhibiting exceptionally high melting temperatures (T$_c$ $\approx$ 20-30 K). Robust Wigner crystallization activates multiple finite-momentum optical resonances, including quasilinearly dispersing, light-like excitons and exciton polarons, extending far beyond the single excitonic Umklapp feature reported previously. Helicity-resolved magneto-optical measurements reveal a pronounced valley dependence of the scattering processes. Combined experiment and theory identify a polaron-induced brightening mechanism in which exciton polarons transfer oscillator strength from bright zero-momentum states to otherwise dark finite-momentum states, explaining the emergence of multiple Umklapp branches where conventional exciton-WC scattering is ineffective. These results establish WC polarons as a new quasiparticle paradigm and introduce polaron-induced Umklapp scattering as a general route to accessing finite-momentum many-body excitations in 2D quantum materials.

  PublisherOA PDF

Recent grants

• Collaborative Research: GOALI: Graphene THz/IR Optics: Fundamentals and Emerging Photonics Applications

  NSF · $293k · 2014–2018

• GOALI: Tailoring the Electronic Structure of Few-Layer Graphene for Electronic and Optoelectronic Applications

  NSF · $570k · 2011–2015

• NIRT/SNB: Combined Optical, Electrical, Mechanical, and Thermal Characterization of Individual Nanotubes

  NSF · $1.3M · 2005–2010

• Controlling the Band Structure of 2D Semiconductors by their Dielectric Environment

  NSF · $405k · 2017–2021

• Collaborative Research: Properties and Synthesis of Atomically Thin Molybdenum Disulfide

  NSF · $240k · 2011–2015

Frequent coauthors

• James Hone

  Columbia University

  154 shared

• Alexey Chernikov

  124 shared

• Louis E. Brus

  Columbia University

  93 shared

• Heather M. Hill

  73 shared

• Albert F. Rigosi

  72 shared

• Jie Shan

  Cornell University

  71 shared

• Archana Raja

  University of California, Berkeley

  58 shared

• Aaron M. Lindenberg

  SLAC National Accelerator Laboratory

  58 shared

Labs

• Heinz Research GroupPI

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Education

• Ph.D., Applied Physics

  Stanford University

  1980

• M.S., Physics

  Stanford University

  1976

• B.S., Physics

  University of California, Berkeley

  1974