About

Yingjie Chen is a professor at Purdue University with a comprehensive background in human-computer interaction, information visualization, and visual analytics. He received his Ph.D. from the School of Interactive Arts and Technology at Simon Fraser University in Canada, where he also earned his Master of Science degree. His undergraduate degree was in Engineering from Tsinghua University in China. Dr. Chen has over two decades of experience working across multidisciplinary domains, starting as an engineer, 3D illustrator and animator, then progressing to web designer and Internet system developer before becoming an academic researcher and educator. His research focuses on designing, modeling, and constructing new forms of interaction in visualization and system design, aiming to minimize system influence on design and analysis, thereby creating systems that extend human capabilities. He conducts both basic and applied research, emphasizing the importance of high-quality prototypes and evaluation in advancing the field. His work integrates theory, analysis, design, implementation, and review through iterative processes. Dr. Chen's contributions span areas such as computer graphics, virtual reality, and AI in graphics, with a particular interest in making visualization systems more intuitive and effective for users.

Research topics

• Optoelectronics
• Condensed matter physics
• Materials science
• Nanotechnology
• Engineering physics

Selected publications

• Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions

  ArXiv.org · 2026-02-03

  articleOpen access

  Atomic-scale control over band alignment in single-layer lateral heterostructures (LHSs) of dissimilar transition metal dichalcogenides (TMDCs) is critical for nextgeneration electronic, optoelectronic, and quantum technologies. However, direct experimental access to interfacial electronic states with nanometer precision remains a significant challenge. Here, we employ angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) to directly map the epitaxial alignment and valence band evolution across MoSe2-WSe2 LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets, in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.

  PublisherOA PDF

• Complex electronic topography and magnetotransport in an in-plane ferromagnetic kagome metal

  Physical Review Materials · 2026-05-11

  articleOpen access

  Kagome materials, with their corner-sharing triangular lattice, have attracted strong interest due to the interplay of correlations, magnetism, symmetry, and topology. Here, the authors engineer the magnetic landscape of ScMn${}_{6}$Sn${}_{6}$ via Ga doping to realize ScMn${}_{6}$(Sn${}_{0.78}$Ga${}_{0.22}$)${}_{6}$, which exhibits robust ferromagnetism below 375 K with an in-plane easy axis. High-resolution angle-resolved photoemission spectroscopy (ARPES) measurements reveal a Dirac cone near the Fermi energy, while theoretical calculations show that its gap can be tuned by the orientation of the magnetic moments. Additionally, a flat band spanning a large region of the Brillouin zone, originating from the Kagome lattice, is observed.

  PublisherOA PDFDOI

• A blade damage identification method based on bladed disk modal analysis and blade tip timing

  SSRN Electronic Journal · 2026-01-01

  preprintOpen access
  PublisherDOI

• Direct nanoscale mapping of band alignment in single-layer semiconducting lateral heterojunctions

  Open MIND · 2026-02-03

  preprint

  Atomic-scale control over band alignment in single-layer lateral heterostructures (LHSs) of dissimilar transition metal dichalcogenides (TMDCs) is critical for nextgeneration electronic, optoelectronic, and quantum technologies. However, direct experimental access to interfacial electronic states with nanometer precision remains a significant challenge. Here, we employ angle-resolved photoemission spectroscopy with nanoscale spatial resolution (nanoARPES) to directly map the epitaxial alignment and valence band evolution across MoSe2-WSe2 LHSs. By combining nanoARPES with spatially resolved photoluminescence, we correlate the evolution of the valence band maximum and exciton features across both atomically sharp and compositionally graded diffusive interfaces. We identified type-II band alignments governed by both material composition and interstitial-induced modifications of band offsets, in close agreement with density functional theory calculations. These results reveal fundamental mechanisms of electronic structure modulation at 1D TMDC heterointerfaces and provide a robust platform for tailored band engineering in van der Waals materials.

  DOI

• Smart tunable colorful thermal emitter based on In3SbTe2 for all-season thermal management

  Solar Energy Materials and Solar Cells · 2025-09-03

  articleSenior authorCorresponding
  PublisherDOI

• Resonantly enhanced photoemission from topological surface states in MnBi₆Te₁₀

  Journal of Physics Condensed Matter · 2025-09-02

  articleOpen access

  Abstract The dispersion of topological surface bands in MnBi 2 Te 4 (MBT)-based magnetic topological insulator heterostructures is strongly affected by band hybridization and is spatially inhomogeneous due to varying surface layer terminations on microscopic length scales. Here, we apply micro-focused angle-resolved photoemission spectroscopy with tunable photon energy from 18 to 30 eV to distinguish bulk valence and conduction bands from surface bands on the three surface terminations of MnBi 6 Te 10 . We observe a strong enhancement of photoemission intensity from the topological surface bands at the Bi O 4 absorption edge, which is exploited to visualize a gapless Dirac cone on the MBT-terminated surface and varying degrees of hybridization effects in the surface bands on the two distinct Bi 2 Te 3 -terminated surfaces.

  PublisherDOI

• Calibration of the Edinburgh Elasto-Plastic Adhesion contact model for modelling clay-moist soil with high moisture content

  Computers and Electronics in Agriculture · 2025-05-15 · 12 citations

  article
  PublisherDOI

• Frustrated vacancy ordering creates novel quantum properties in Kutinaite, $\mathrm{Ag}_{6}\mathrm{Cu}_{14.4}\mathrm{As}_7$

  ArXiv.org · 2025-05-30

  preprintOpen access

  Ideal crystals are fully ordered, but real-world crystals always contain defects breaking translational symmetry. Random defects in crystals have important implications and they e.g. provide the foundation for semiconductor-based electronic devices. Structurally correlated defects introduce an additional level of complexity, which may lead to novel materials properties, but rationalization of relations between correlated disorder and the emergent material properties are very rare. Here we report that the defect structure of the mineral Kutinaite, Ag6Cu14.4As7, exhibits unprecedented metallic diamagnetism, a hallmark of non-trivial electronic states that require delicate symmetrical protection. Using a combination of X-ray scattering methodologies, simulations, and physical property measurements, we deduced and verified subtle frustrated vacancy ordering of the Cu sublattice when cooling crystals below ~300 K. The vacancy frustration in Kutinaite leads to unique quantum properties, and our study calls for a reconsideration of the role of vacancies as quasi-chemical species in crystals.

  PublisherOA PDFDOI

• Spontaneously formed phonon frequency combs in van der Waals solid CrGeTe3 and CrSiTe3

  Nature Communications · 2025-07-01 · 6 citations

  articleOpen access

  Abstract Optical phonon engineering through nonlinear effects has been utilized in ultrafast control of material properties. However, nonlinear optical phonons typically exhibit rapid decay due to strong mode-mode couplings, limiting their effectiveness in temperature or frequency sensitive applications. Here we report the observation of long-lived nonlinear optical phonons through the spontaneous formation of phonon frequency combs in the van der Waals material CrXTe 3 (X=Ge, Si) using high-resolution Raman scattering. Unlike conventional optical phonons, the highest A g mode in CrGeTe 3 splits into equidistant, sharp peaks forming a frequency comb that persists for hundreds of oscillations and survives up to 200K. These modes correspond to localized oscillations of Ge 2 Te 6 clusters, isolated from Cr hexagons, behaving as independent quantum oscillators. Introducing a cubic nonlinear term to the harmonic oscillator model, we simulate the phonon time evolution and successfully replicate the observed comb structure. Similar frequency comb behavior is observed in CrSiTe 3 , demonstrating the generalizability of this phenomenon. Our findings demonstrate that Raman scattering effectively probes high-frequency nonlinear phonon modes, offering insight into the generation of long-lived, tunable phonon frequency combs with potential applications in ultrafast material control and phonon-based technologies.

  PublisherOA PDFDOI

• Coherent Spins in van der Waals Semiconductor GeS₂ at Ambient Conditions

  Nano Letters · 2025-09-16 · 3 citations

  articleOpen access

  ) by a factor of 20. Finally, we use density functional theory (DFT) calculations to estimate the structures and spin densities of two possible spin defect candidates. This work will help to expand the field of quantum sensing with spin defects in 2D materials.

  PublisherOA PDFDOI

Recent grants

• Collaborative Research: Strain Based Devices for Switches and Memory Applications

  NSF · $210k · 2017–2021

• Dynamics and Excitations of Spin-Orbit-Coupled Bose-Einstein Condensates

  NSF · $300k · 2017–2021

• ARI-MA: Graphene based sensors for detecting special nuclear materials

  NSF · $380k · 2008–2010

• EFRI NewLaw: Controlling Thermal Transport with Topologically Guided Heat Carriers

  NSF · $2.0M · 2016–2021

• CAREER: Table-top High Energy Physics in Graphene

  NSF · $550k · 2009–2014

Frequent coauthors

• Hiroshi Idzuchi

  The University of Tokyo

  73 shared

• Yaping Qi

  70 shared

• I. Miotkowski

  Purdue University West Lafayette

  63 shared

• Jifa Tian

  University of Wyoming

  58 shared

• Vladimir M. Shalaev

  57 shared

• Xingchen Pan

  54 shared

• Katsumi Tanigaki

  Beijing Academy of Quantum Information Sciences

  51 shared

• Pramey Upadhyaya

  Purdue University West Lafayette

  50 shared

Labs

• Purdue Intelligent Visualization and Interaction LabPI

  Discover, understand, and manipulate digital worlds using revolutionary data visualization and interaction methods.

Awards & honors

• IEEE VAST Challenge 2023 Award: Application of LLMs to Suppo…
• IEEE VAST Challenge 2022 Award: Honorable Mention for Effect…
• IEEE VAST Challenge 2021 Award: Honorable Mention for Effect…
• IEEE VAST Challenge 2020 Award: Effective Transformation of…
• Outstanding Paper, International Journal of Web Information…